optimization of electron raman scattering in double rectangular quantum wells

RAMAN SCATTERING IN MBE GaInAs-InP QUANTUM WELLS

The phonon modes in GaInAs-InP heterostructures were studied by means of Rarnan scatterin . The mode frequencies were found to occur at the bulk values and to be well-defined even for layers of 251. The phonon intensity ratios were found to depend very strongly on the incident laser power and we attribute this to screening of the modes by photoexcited carriers. Introduction Rarnan scattering st...

Hyper Raman Scattering in Microcavity Quantum Wells: A Quantum Optical Process in the Strong Coupling Regime

We analyze the hyper Raman scattering process in a quantum well grown inside a semiconductor microcavity and present a microscopic calculation of emission spectra as a function of excitation energy, detuning, and angles. The exciton±photon coupling is treated non-perturbatively to include polariton effects and the Coulomb interaction between electrons is treated beyond the mean field approximat...

Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering

Electron capture times in a separate confinement quantum well (QW) structure with finite electron density are calculated for electron-electron (e-e) and electron-polar optic phonon (e-pop) scattering. We find that the capture time oscillates as function of the QW width for both processes with the same period, but with very different amplitudes. For an electron density of 10cm the e-e capture ti...

Scattering of Hot Excitons in Quantum Wells

The scattering probabilities of hot excitons in narrow quantum wells (QWs) are obtained. The exciton-phonon matrix element is considered by using an envelope function Hamiltonian approach in the strong quantization limit where the QW width is smaller than the exciton bulk Bohr radius. The Fröhlich-like interaction is taken into account and the contribution of the confined and interface modes to...

Role of excitons in double Raman resonances in GaAs quantum wells.

Stark-effect scattering in rough quantum wells

A scattering mechanism stemming from the Stark-shift of energy levels by electric fields due to interface roughness in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields and modifies the well known “sixth-power” law of electron mobility degradation. This work first treats Stark-effect scattering in rough quantum wells as a pert...